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FCB20N60FTM View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
FCB20N60FTM
Fairchild
Fairchild Semiconductor Fairchild
FCB20N60FTM Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Package Marking and Ordering Information
Device Marking Device
FCB20N60F
FCB20N60FTM
Package
D2-Pak
Reel Size
330mm
Tape W idth
24m
Quantity
800
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min
OffCharacteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250PA, TJ = 25qC
600
VGS = 0V, ID = 250PA, TJ = 150qC
--
'BVDSS
/ 'TJ
Breakdown Voltage Temperature
Coefficient
ID = 250PA, Referenced to 25qC
--
BVDSS
Drain-Source Avalanche Breakdown
Voltage
VGS = 0V, ID = 20A
--
IDSS
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
--
VDS = 480V, TC = 125qC
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V
--
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250PA
3.0
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 10A
--
gFS
Forward Transconductance
Dynamic Characteristics
VDS = 40V, ID = 10A
(Note 4) --
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
Switching Characteristics
VDS = 25V, VGS = 0V,
--
f = 1.0MHz
--
--
VDS = 480V, VGS = 0V, f = 1.0MHz
--
VDS = 0V to 400V, VGS = 0V
--
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 300V, ID = 20A
RG = 25:
VDS = 480V, ID = 20A
VGS = 10V
--
--
--
(Note 4, 5)
--
--
--
(Note 4, 5)
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0V, IS = 20A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 20A
dIF/dt =100A/Ps
--
--
--
--
(Note 4)
--
Typ
--
650
0.6
700
--
--
--
--
--
0.15
17
2370
1280
95
65
165
62
140
230
65
75
13.5
36
--
--
--
160
1.1
Max Units
--
V
--
V
-- V/qC
--
V
10
PA
100 PA
100 nA
-100 nA
5.0
V
0.19 :
--
S
3080 pF
1665 pF
--
pF
85
pF
--
pF
135 ns
290 ns
470 ns
140 ns
98
nC
18
nC
--
nC
20
A
60
A
1.4
V
--
ns
--
PC
NOTES:
1. Repetitive Rating:Pulse width limited by maximum junction temperature
2. IAS = 10A, VDD = 50V, RG = 25:, Starting TJ = 25qC
3. ISD d 20A, di/dt d1200A/Ps, VDD d BVDSS, Starting TJ = 25qC
4. Pulse Test:Pulse width d 300Ps, Duty Cycle d 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FCB20N60F Rev. A2
2
www.fairchildsemi.com
 

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