EN29LV160C View Datasheet(PDF) - Eon Silicon Solution Inc.
Part Name
Description
Manufacturer
EN29LV160C
Eon Silicon Solution Inc.
EN29LV160C Datasheet PDF : 44 Pages
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Table 11. DC Characteristics
(Ta = - 40°C to 85°C; VCC = 2.7-3.6V)
Symbol
Parameter
ILI
ILO
ICC1
Input Leakage Current
Output Leakage Current
Active Read Current ( Byte mode)
Active Read Current ( Word mode)
ICC2
Supply Current (Standby-
CMOS)
ICC3 Supply Current (Program or Erase)
Test Conditions
0V≤ VIN ≤ Vcc
0V≤ VOUT ≤ Vcc
CE# = VIL ; OE# = VIH ;
f = 5MHZ
CE# = BYTE# =
RESET# = Vcc ± 0.3V
(Note 1)
Byte program, Sector or
Chip Erase in progress
ICC4 B
B
Reset Current
ICC5 B
B
VIL
VIH
VOL
Automatic Sleep Mode
Input Low Voltage
Input High Voltage
Output Low Voltage
RESET# = Vss ± 0.3V
VIH B
B
= Vcc ± 0.3V
VILB
B
= Vss ± 0.3V
IOL = 4.0 mA
VOH
Output High Voltage CMOS
IOH = -100μA
VID
IID
VLKO
A9 Voltage (Electronic Signature)
A9 Current (Electronic Signature)
Supply voltage (Erase and
Program lock-out)
A9 = VID
Min
-0.5
0.7 x
Vcc
Vcc -
0.4V
8.5
2.3
EN29LV160C
Typ Max Unit
±5
µA
±5
µA
9
16
mA
9
16
mA
1
5.0
µA
20
30
mA
1
5.0
µA
1
5.0
µA
0.8
V
Vcc +
0.3
V
0.45
V
V
9.5
V
100
µA
2.5
V
Notes
1. BYTE# pin can also be GND ± 0.3V. BYTE# and RESET# pin input buffers are always enabled so that they
draw power if not at full CMOS supply voltages.
This Data Sheet may be revised by subsequent versions
26
or modifications due to changes in technical specifications.
© 2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/10/26
www.eonssi.com
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