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EN29LV160C View Datasheet(PDF) - Eon Silicon Solution Inc.

Part NameDescriptionManufacturer
EN29LV160C 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only Eon
Eon Silicon Solution Inc. Eon
EN29LV160C Datasheet PDF : 44 Pages
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COMMON FLASH INTERFACE (CFI)
EN29LV160C
The common flash interface (CFI) specification outlines device and host systems software interrogation
handshake, which allows specific vendor-specified software algorithms to be used for entire families of
devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and
backward-compatible for the specified flash device families. Flash vendors can standardize their
existing interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to
address 55h in word mode (or address AAh in byte mode), any time the device is ready to read array
data.
The system can read CFI information at the addresses given in Tables 5-8. In word mode, the upper
address bits (A7–MSB) must be all zeros. To terminate reading CFI data, the system must write the
reset command.
The system can also write the CFI query command when the device is in the autoselect mode. The
device enters the CFI query mode and the system can read CFI data at the addresses given in Tables
5–8. The system must write the reset command to return the device to the autoselect mode.
Adresses
(Word Mode)
10h
11h
12h
13h
14h
15h
16h
17h
18h
19h
1Ah
Table 5. CFI Query Identification String
Adresses
(Byte Mode) Data
Description
20h
0051h
22h
0052h Query Unique ASCII string “QRY”
24h
0059h
26h
28h
0002h
0000h
Primary OEM Command Set
2Ah
2Ch
0040h
0000h
Address for Primary Extended Table
2Eh
30h
0000h
0000h
Alternate OEM Command set (00h = none exists)
32h
34h
0000h
0000h
Address for Alternate OEM Extended Table (00h = none exists
Addresses
(Word Mode)
1Bh
1Ch
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
Table 6. System Interface String
Addresses
(Byte Mode) Data
Description
36h
0027h
Vcc Min (write/erase)
D7-D4: volt, D3 –D0: 100 millivolt
38h
0036h
Vcc Max (write/erase)
D7-D4: volt, D3 –D0: 100 millivolt
3Ah
0000h Vpp Min. voltage (00h = no Vpp pin present)
3Ch
0000h Vpp Max. voltage (00h = no Vpp pin present)
3Eh
0004h Typical timeout per single byte/word write 2^N  s
40h
0000h
Typical timeout for Min, size buffer write 2^N  s (00h = not
supported)
42h
000Ah Typical timeout per individual block erase 2^N ms
44h
0000h Typical timeout for full chip erase 2^N ms (00h = not supported)
46h
0005h Max. timeout for byte/word write 2^N times typical
48h
0000h Max. timeout for buffer write 2^N times typical
4Ah
0004h Max. timeout per individual block erase 2^N times typical
4Ch
0000h
Max timeout for full chip erase 2^N times typical (00h = not
supported)
This Data Sheet may be revised by subsequent versions
11
or modifications due to changes in technical specifications.
© 2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/10/26
www.eonssi.com
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