EN25Q16-100HI View Datasheet(PDF) - Eon Silicon Solution Inc.

Part Name

Description

Manufacturer

EN25Q16-100HI

16 Megabit Serial Flash Memory with 4Kbyte Uniform Sector

Eon Silicon Solution Inc. 

Revisions List

EN25Q16

Revision No Description

Date

A

Initial Release

2009/01/05

B

Remove the HOLD# function from version A.

2009/02/04

C

Modify tCSH CS# High Time from 100ns to 15ns for read and 50ns for

program/erase in Table 11

2009/3/31

1. Update Page program, Sector, Block and Chip erase time (typ.)

parameter on page 1 and 30.

(1). Page program: from 1.5ms to 1.3m

D

(2). Sector erase: from 0.15s to 0.09s

(3). Block erase: from 0.8s to 0.4s

2009/4/27

(4). Chip erase: from 18s to 12s

2. Add the description of OTP erase command on page 10 and page 27.

3. Modify RDSR, RDID from 50 to 80MHz in Table 11 on page 30

E

Modify Table 9. DC Characteristics ICC1 (Standby) and ICC2 (Deep

2009/10/21

Power-down) Current from 5µA to 20µA on page 29.

This Data Sheet may be revised by subsequent versions

40

or modifications due to changes in technical specifications.

©2004 Eon Silicon Solution, Inc.,

Rev. E, Issue Date: 2009/10/21

www.eonssi.com

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