EN25Q16-100WI View Datasheet(PDF) - Eon Silicon Solution Inc.

Part Name

Description

Manufacturer

EN25Q16-100WI

16 Megabit Serial Flash Memory with 4Kbyte Uniform Sector

Eon Silicon Solution Inc. 

Table 12. DATA RETENTION and ENDURANCE

Parameter Description

Data Retention Time

Erase/Program Endurance

Test Conditions

150°C

125°C

-40 to 85 °C

Min

10

20

100k

EN25Q16

Unit

Years

Years

cycles

Table 13. CAPACITANCE

( VCC = 2.7-3.6V)

Parameter Symbol

Parameter Description

Test Setup

Typ

Max

CIN

Input Capacitance

VIN = 0

6

Unit

pF

COUT

Output Capacitance

VOUT = 0

8

pF

Note : Sampled only, not 100% tested, at TA = 25°C and a frequency of 20MHz.

This Data Sheet may be revised by subsequent versions

33

or modifications due to changes in technical specifications.

©2004 Eon Silicon Solution, Inc.,

Rev. E, Issue Date: 2009/10/21

www.eonssi.com

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