EN25Q16-100GI View Datasheet(PDF) - Eon Silicon Solution Inc.

Part Name

Description

Manufacturer

EN25Q16-100GI

16 Megabit Serial Flash Memory with 4Kbyte Uniform Sector

Eon Silicon Solution Inc. 

EN25Q16

Power-up Timing

Figure 23. Enter OTP Mode

Figure 24. Power-up Timing

Table 8. Power-Up Timing and Write Inhibit Threshold

Symbol

tVSL(1)

tPUW(1)

VWI(1)

Parameter

VCC(min) to CS# low

Time delay to Write instruction

Write Inhibit Voltage

Note:

1.The parameters are characterized only.

2. VCC (max.) is 3.6V and VCC (min.) is 2.7V

Min.

10

1

1

Max. Unit

µs

10

ms

2.5

V

INITIAL DELIVERY STATE

The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh).

The Status Register contains 00h (all Status Register bits are 0).

This Data Sheet may be revised by subsequent versions

28

or modifications due to changes in technical specifications.

©2004 Eon Silicon Solution, Inc.,

Rev. E, Issue Date: 2009/10/21

www.eonssi.com

Share Link: