EN25F10 View Datasheet(PDF) - Eon Silicon Solution Inc.

Part Name

Description

Manufacturer

EN25F10

1 Megabit Serial Flash Memory with 4Kbytes Uniform Sector

Eon Silicon Solution Inc. 

EN25F10

Read Data Bytes at Higher Speed (FAST_READ) (0Bh)

The device is first selected by driving Chip Select (CS#) Low. The instruction code for the Read Data

Bytes at Higher Speed (FAST_READ) instruction is followed by a 3-byte address (A23-A0) and a

dummy byte, each bit being latched-in during the rising edge of Serial Clock (CLK). Then the memory

contents, at that address, is shifted out on Serial Data Output (DO), each bit being shifted out, at a

maximum frequency FR, during the falling edge of Serial Clock (CLK).

The instruction sequence is shown in Figure 10. The first byte addressed can be at any location. The

address is automatically incremented to the next higher address after each byte of data is shifted out.

The whole memory can, therefore, be read with a single Read Data Bytes at Higher Speed

(FAST_READ) instruction. When the highest address is reached, the address counter rolls over to

000000h, allowing the read sequence to be continued indefinitely.

The Read Data Bytes at Higher Speed (FAST_READ) instruction is terminated by driving Chip Select

(CS#) High. Chip Select (CS#) can be driven High at any time during data output. Any Read Data Bytes

at Higher Speed (FAST_READ) instruction, while an Erase, Program or Write cycle is in progress, is

rejected without having any effects on the cycle that is in progress.

Figure 10. Fast Read Instruction Sequence Diagram

This Data Sheet may be revised by subsequent versions

14

or modifications due to changes in technical specifications.

©2004 Eon Silicon Solution, Inc.,

Rev. E, Issue Date: 2010/05/25

www.eonssi.com

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