EIC1010-25
10.0-10.25 GHz 25-Watt Internally Matched Power FET
FEATURES
• 10.0 – 10.25 GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +44 dBm Output Power at 1dB Compression
• 7 dB Power Gain at 1dB Compression
• 33% Power Added Efficiency
• Hermetic Metal Flange Package
• 100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
2X 0.079 MIN
4X 0.102
0.945 0.803
Excelics
EIC1010-25
YYWW
SN
0.010
0.158
0.055
0.315
0.685
0.617
0.024
0.580
0.004
0.095
0.055
0.168
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
MIN
TYP
MAX
P1dB
Output Power at 1dB Compression
VDS = 9 V, IDSQ ≈ 4000mA
f = 10.0-10.25GHz
43
G1dB
Gain at 1dB Compression
VDS = 9 V, IDSQ ≈ 4000mA
f = 10.0-10.25GHz
6.5
∆G
Gain Flatness
VDS = 9 V, IDSQ ≈ 4000mA
f = 10.0-10.25GHz
PAE
Power Added Efficiency at 1dB Compression
VDS = 9 V, IDSQ ≈ 4000mA
f = 10.0-10.25GHz
Id1dB
Drain Current at 1dB Compression
f = 10.0-10.25GHz
44
7
33
6500
±0.6
7200
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
11
16
VP
Pinch-off Voltage
RTH
Thermal Resistance2
VDS = 3 V, IDS = 130 mA
-2.5
-4.0
1.4
1.8
1. Tested with 15 Ohm gate resistor, forward and reverse gate current should not exceed 105mA and -10.5mA respectively
2. Overall Rth depends on case mounting.
UNITS
dBm
dB
dB
%
mA
A
V
oC/W
MAXIMUM RATING AT 25°C1,2
SYMBOLS
PARAMETERS
Vds
Drain-Source Voltage
Vgs
Gate-Source Voltage
Pin
Input Power
Tch
Channel Temperature
Tstg
Storage Temperature
Pt
Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
ABSOLUTE1
15
-5
38.5 dBm
175 oC
-65 to +175 oC
83W
CONTINUOUS2
10V
-4V
@ 3dB Compression
175 oC
-65 to +175 oC
83W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
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