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D1028 METAL GATE RF SILICON FET Semelab
Semelab - > TT Electronics plc  Semelab
D1028 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
TetraFET
D1028UK
MECHANICAL DATA
C
(2 pls)
1
HD
B
2
3
5
4
E
(4 pls)
F
I
G
(typ)
P
(2 pls) A
PIN 1
PIN 3
PIN 5
NM
O
DR
SOURCE (COMMON)
DRAIN 2
GATE 1
JK
PIN 2
PIN 4
DRAIN 1
GATE 2
DIM Millimetres Tol.
A 19.05 0.50
B 10.77 0.13
C
45°
D
9.78
0.13
E
5.71
0.13
F 27.94 0.13
G 1.52R 0.13
H 10.16 0.13
I
22.22 MAX
J
0.13
0.02
K
2.72
0.13
M
1.70
0.13
N
5.08
0.50
O 34.03 0.13
P 1.57R 0.08
Inches
0.75
0.424
45°
0.385
0.225
1.100
0.060R
0.400
0.875
0.005
0.107
0.067
0.200
1.340
0.062R
Tol.
0.020
0.005
0.005
0.005
0.005
0.005
0.005
MAX
0.001
0.005
0.005
0.020
0.005
0.003
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
300W – 28V – 175MHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
VHF/UHF COMMUNICATIONS
from 1 MHz to 200 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
Power Dissipation
438W
BVDSS
Drain – Source Breakdown Voltage
70V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
30A
Tstg
Storage Temperature
–65 to 150°C
Tj
Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
01/01
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