M29W320DT, M29W320DB
Common Flash Interface (CFI)
Table 23. CFI Query System Interface Information
Address
x16
x8
Data
Description
VCC Logic Supply Minimum Program/Erase voltage
1Bh
36h
0027h bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
VCC Logic Supply Maximum Program/Erase voltage
1Ch
38h
0036h bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
VPP [Programming] Supply Minimum Program/Erase voltage
1Dh
3Ah
00B5h bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
VPP [Programming] Supply Maximum Program/Erase voltage
1Eh
3Ch
00C5h bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
1Fh
3Eh
0004h Typical timeout per single byte/word program = 2n µs
20h
40h
0000h Typical timeout for minimum size write buffer program = 2n µs
21h
42h
000Ah Typical timeout per individual block erase = 2n ms
22h
44h
0000h Typical timeout for full chip erase = 2n ms
23h
46h
0005h Maximum timeout for byte/word program = 2n times typical
24h
48h
0000h Maximum timeout for write buffer program = 2n times typical
25h
4Ah
0004h Maximum timeout per individual block erase = 2n times typical
26h
4Ch
0000h Maximum timeout for chip erase = 2n times typical
Table 24. Device Geometry Definition
Address
x16
x8
Data
Description
27h
4Eh
0016h Device Size = 2n in number of bytes
28h
50h
0002h
Flash Device Interface Code description
29h
52h
0000h
2Ah
54h
0000h Maximum number of bytes in multi-byte program or page = 2n
2Bh
56h
0000h
Number of Erase Block Regions within the device.
2Ch
58h
0004h It specifies the number of regions within the device containing
contiguous Erase Blocks of the same size.
2Dh
5Ah
0000h Region 1 Information
2Eh
5Ch
0000h Number of identical size erase block = 0000h+1
2Fh
5Eh
0040h Region 1 Information
30h
60h
0000h Block size in Region 1 = 0040h * 256 byte
Value
2.7V
3.6V
11.5V
12.5V
16µs
NA
1s
NA
512µs
NA
16s
NA
Value
4 MByte
x8, x16
Async.
NA
4
1
16 Kbyte
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