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CNY17F-1 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
CNY17F-1 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
MOC8101
MOC8105
CNY17F-1
MOC8102
MOC8106
CNY17F-2
6-PIN DIP OPTOCOUPLERS FOR
POWER SUPPLY APPLICATIONS
(NO BASE CONNECTION)
MOC8103
MOC8107
CNY17F-3
MOC8104
MOC8108
CNY17F-4
ELECTRICAL CHARACTERISTICS (TA =25°C Unless otherwise specified)(1)
Characteristic
Symbol
Min
Typ**
INPUT LED
Forward Voltage
(IF = 60 mA)
(IF = 10 mA)
Reverse Leakage Current (VR = 5.0 V)
Capacitance
CNY17F-X
MOC810X
OUTPUT TRANSISTOR
Collector-Emitter Dark Current
Collector-Emitter Breakdown Voltage
(VCE = 10 V, TA = 25°C)
(VCE = 10 V, TA = 100°C)
MOC8101/2/3/4/5
MOC8106/7/8, CNY17F-1/2/3/4
Emitter-Collector Breakdown Voltage
Collector-Emitter Capacitance
COUPLED
(IC = 1.0 mA)
(IC = 1.0 mA)
(IE = 100 µA)
(f = 1.0 MHz, VCE = 0)
MOC8101
MOC8102
MOC8103
Output Collector Current
(IF = 10 mA, VCE = 10 V)
MOC8104
MOC8105
MOC8106
MOC8107
MOC8108
CNY17F-1
(IF = 10 mA, VCE = 5 V)
CNY17F-2
CNY17F-3
CNY17F-4
Collector-Emitter Saturation Voltage
CNY17F-1/2/3/4
MOC8101/2/3/4/5/6/7/8
Isolation Voltage
Isolation Resistance
Isolation Capacitance
** All typicals at TA = 25°C
(IC = 2.5 mA, IF = 10 mA)
(IC = 500 µA, IF = 5.0 mA)
(f = 60 Hz, t = 1.0 min.)(4)
(VI-O = 500 V)(4)
(VI-O = 0, f = 1.0 MHz)(4)
VF
IR
C
ICEO1
ICEO2
V(BR) CEO
V(BR) ECO
CCE
(CTR)(2)
VCE(sat)
VISO
RISO
CISO
1.0
30
70
7.0
50
73
108
160
65
50
100
250
40
63
100
160
5300
1011
1.40
1.18
0.001
18
1.0
1.0
100
100
10
8
0.5
Max
Unit
1.65
V
1.5
10
µA
pF
50
nA
µA
V
V
pF
80
117
173
256
133
150
%
300
600
80
125
200
320
0.4
V
Vac(rms)
pF
© 2004 Fairchild Semiconductor Corporation
Page 3 of 12
1/21/04
 

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