CHA5051 View Datasheet(PDF) - United Monolithic Semiconductors

Part Name

Description

Manufacturer

CHA5051

7-16GHz Medium Power Amplifier GaAs Monolithic Microwave IC

United Monolithic Semiconductors 

CHA5051

RoHS COMPLIANT

7-16GHz Medium Power Amplifier

GaAs Monolithic Microwave IC

Description

The CHA5051 is a high gain three-stage

monolithic medium power amplifier. It is

designed for a wide range of applications,

from military to commercial communication

systems. The backside of the chip is both

RF and DC grounds. This helps to simplify

the assembly process.

The circuit is manufactured with a pHEMT

process, 0.15µm gate length, via holes

through the substrate.

30

It is available in chip form

25

20

Main Features

15

10

■ Broadband performance 7-16GHz

5

■ 25dB gain & 3dB noise figure

0

■ RF ports ESD protected (see page 12)

-5

■ 25dBm output power @ 1dB

-10

compression

-15

■ DC power consumption, 310mA @ 4.5V

-20

0

■ Chip size 2.41 x 1.5 x 0.10mm

Gain & Return Losses (dB)

S21 (dB)

S11 (dB)

S22 (dB)

5

10

15

20

25

30

Freq (GHz)

Typical on wafer measurement

Main Characteristics

Tamb.=25°C, Vd=4.5V

Symbol

Parameter

Fop

G

NF

P1dB

Id

Operating frequency range

Small signal gain

Noise figure

Output power at 1dB gain compression

Bias current

Min Typ Max Unit

7

16 GHz

25

dB

3

dB

25

dBm

310

mA

ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!

Ref : DSCHA50517152 - 01 Jun 07

1/14

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel.: +33 (0 ) 1 69 33 03 08 – Fax: +33 (0) 1 69 33 03 09

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