CE1F3P View Datasheet(PDF) - NEC => Renesas Technology

Part Name

Description

Manufacturer

CE1F3P

on-chip resistor NPN silicon epitaxial transistor For mid-speed switching

NEC => Renesas Technology 

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The CE1F3P is a transistor of on-chip high hFE resistor

incorporating dumper diode in collector to emitter and zener diode

in collector to base as protect elements. This transistor is ideal for

actuator drives of OA equipments and electric equipments.

FEATURES

• On-chip zener diode for surge voltage absorption

• On-chip bias resistor: R1 = 2.2 kΩ, R2 = 10 kΩ

• Low power consumption during driving:

VOL = 0.12 V @VI = 5.0 V, IC = 0.5 A

• On-chip dumper diode for reverse cable

* PW≤10 ms, duty cycle≤50 %

PACKAGE DRAWING (UNIT: mm)

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Symbol

Ratings

Unit

Collector to base voltage

VCBO

60±10

V

Collector to emitter voltage

VCEO

60±10

V

Emitter to base voltage

VEBO

15

V

Collector current (DC)

IC(DC)

±2.0

A

Collector current (Pulse)

IC(pulse) *

±3.0

A

Base current (DC)

IB(DC)

0.03

A

Total power dissipation

PT

1.0

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Parameter

Symbol

Conditions

Colletor to emitter voltage

VCEO(SUS) IC = 2.0 A, IB = 5.0 Ma, L = 6.0 mH

Collector cutoff current

ICBO

VCB = 40 V, IE = 0

DC current gain

hFE1 ** VCE = 5.0 V, IC = 0.2 A

DC current gain

hFE2 ** VCE = 5.0 V, IC = 1.0 A

DC current gain

hFE3 ** VCE = 5.0 V, IC = 2.0 A

Low level output voltage

VOL ** VI = 5.0 V, IC = 0.5 A

Low level input voltage

VIL ** VCE = 12 V, IC = 100 µA

Input resistance 1

R1

Input resistance 2

R2

Turn-on time

Storage time

Fall time

ton

IC = 1.0 A

tstg

IBI = −IB2 = 10 mA

tf

VCC = 20 V, RL = 20 Ω

** Pulse test PW ≤ 350 µs, duty cycle ≤ 2 %

MIN.

TYP.

MAX.

Unit

50

60

V

100

nA

700

1200

−

1000

1600

3000

−

500

1200

−

0.12

0.3

V

0.5

0.4

V

1.54

2.2

2.86

kΩ

7.0

10.0

13.0

kΩ

0.4

µs

1.4

µs

0.5

µs

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

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©

21090928

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