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BZX384B16-HE3-18 View Datasheet(PDF) -

Part Name
Description
Manufacturer
BZX384B16-HE3-18
 
BZX384B16-HE3-18 Datasheet PDF : 0 Pages
www.vishay.com
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
BZX384-Series
Vishay Semiconductors
mA
103
102
IF 10
1
10-1
10-2
10-3
10-4
10-5
0
18114
TJ = 100 °C
TJ = 25 °C
0.2 0.4 0.6 0.8 1V
VF
Fig. 1 - Forward characteristics
Ω
100
5
4
rzj
3
2
10
5
4
3
2
1
0.1 2
18119
51 2
TJ = 25 °C
33
27
22
18
15
12
10
6.8/8.2
6.2
5 10 2
IZ
5 100 mA
Fig. 4 - Dynamic Resistance vs. Zener Current
mW
250
200
Ptot
150
100
50
0
0
18192
100
T
amb
200 °C
Fig. 2 - Admissible Power Dissipation vs.
Ambient Temperature
Ω
103
7
5
4
Rzj
3 47 + 51
43
2
39
36
102
7
5
4
3
2
Tj = 25 °C
10
0.1
18120
2 3 45
1
2 3 4 5 10
IZ
mA
Fig. 5 - Dynamic Resistance vs. Zener Current
Ω
1000
5
4
3
rzj
2
100
5
4
3
2
TJ = 25 °C
10
5
4
3
2
1
0.1 2
18117
51 2
5 10 2
I
Z
2.7
3.6
4.7
5.1
5.6
5 100 mA
Fig. 3 - Dynamic Resistance vs. Zener Current
Ω
103
5
4
3
Rzth 2
102
5
4
3
2
Rzth
=
RthA
x
VZ
x
ΔVZ
ΔTj
10
5
4
3 negative
2
1
1
18121
2 3 45
positive
10 2 3 4 5 100 V
VZ at IZ = 5 mA
Fig. 6 - Thermal Differential Resistance vs. Zener Voltage
Rev. 1.9, 08-May-13
4
Document Number: 85764
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 

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