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BZW04-10 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
BZW04-10
ST-Microelectronics
STMicroelectronics ST-Microelectronics
BZW04-10 Datasheet PDF : 6 Pages
1 2 3 4 5 6
BZW04-5V8/376
®
BZW04-5V8B/376B
FEATURES
s PEAK PULSE POWER : 400 W (10/1000µs)
s STAND-OFF VOLTAGE RANGE :
From 5.8V to 376 V
s UNI AND BIDIRECTIONAL TYPES
s LOW CLAMPING FACTOR
s FAST RESPONSE TIME
s UL RECOGNIZED
TRANSILTM
DESCRIPTION
Transil diodes provide high overvoltage protection
by clamping action. Their instantaneous response
to transient overvoltages makes them particu-
larly suited to protect voltage sensitive devices
such as MOS Technology and low voltage sup-
plied IC’s.
DO-15
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)
Symbol
Parameter
Value
Unit
PPP
Peak pulse power dissipation (see note 1) Tj initial = Tamb
400
W
P
Power dissipation on infinite heatsink
Tamb = 75°C
1.7
W
IFSM
Non repetitive surge peak forward current tp = 10ms
30
A
for unidirectional types
Tj initial = Tamb
Tstg
Storage temperature range
Tj
Maximum junction temperature
- 65 to + 175 °C
175
°C
TL
Maximum lead temperature for soldering during 10s a 5mm
from case.
230
°C
Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit.
THERMAL RESISTANCES
Symbol
Rth (j-l)
Rth (j-a)
Parameter
Junction to leads
Junction to ambient on printed circuit.
Llead = 10 mm
Value
60
100
Unit
°C/W
°C/W
February 2003- Ed : 3A
1/6
 

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