BYV118 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BYV118 Datasheet PDF : 6 Pages
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Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
BYV118, BYV118B series
5 Forward dissipation, PF (W) PBYR1045CTD
Vo = 0.43 V
Rs = 0.034 Ohms
4
0.5
Tmb(max) / C137.5
D = 1.0
132
0.2
3
0.1
146.5
2
141
I
tp
D=
tp
T
1
155.5
T
t
0
150
0
1
2
3
4
5
6
7
8
Average forward current, IF(AV) (A)
Fig.1. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
IF(AV) =IF(RMS) x √D.
Forward dissipation, PF (W)
5
Vo = 0.43 V
Rs = 0.034 Ohms
4
PBYR1045CTD
Tmb(max) / C
137.5
a = 1.57 132
1.9
2.2
3
2.8
4
146.5
2
141
1
155.5
0
150
0
1
2
3
4
5
Average forward current, IF(AV) (A)
Fig.2. Maximum forward dissipation PF = f(IF(AV)) per
diode; sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).
20 Forward current, IF (A)
Tj = 25 C
Tj = 125 C
15
typ
10
max
5
BYV118
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4
Forward voltage, VF (V)
Fig.3. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
100 Reverse current, IR (mA)
PBYR645CT
10 125 C
100 C
1 75 C
50 C
0.1
Tj = 25 C
0.01
0
25
50
Reverse voltage, VR (V)
Fig.4. Typical reverse leakage current per diode;
IR = f(VR); parameter Tj
Cd / pF
1000
PBYR645CT
100
10
1
10
100
VR / V
Fig.5. Typical junction capacitance per diode;
Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.
10 Transient thermal impedance, Zth j-mb (K/W)
1
0.1
PD
tp
D=
tp
T
0.01
1us
T
t
10us 100us 1ms 10ms 100ms 1s 10s
pulse width, tp (s)
BYV118
Fig.6. Transient thermal impedance; per diode;
Zth j-mb = f(tp).
May 1998
3
Rev 1.300
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