BUZ92 View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

BUZ92

SIPMOS® Power Transistor

Siemens AG 

BUZ 92

Typ. output characteristics

ID = ƒ(VDS)

parameter: tp = 80 µs

l

7.5 Ptot = 80W

A

k

j

ihg

f

6.5

ID

6.0

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

0

10

20

30

e VGS [V]

a 4.0

b 4.5

c 5.0

d 5.5

d

e 6.0

f 6.5

g 7.0

h 7.5

c

i 8.0

j 9.0

k 10.0

l 20.0

b

a

40 V 55

VDS

Typ. transfer characteristics ID = f (VGS)

parameter: tp = 80 µs

VDS≥2 x ID x RDS(on)max

3.2

A

ID

2.4

2.0

1.6

1.2

0.8

0.4

0.0

0 1 2 3 4 5 6 7 8 V 10

VGS

Typ. drain-source on-resistance

RDS (on) = ƒ(ID)

parameter: VGS

10

Ωa

b

c

d

RDS (on) 8

7

6

5

e

4

f

gh

3

ij

k

2

VGS [V] =

1ab

4.05 5.0

0

0.0 1.0

cd

5.5 6.0

2.0

ef g

6.5 7.0 7.5

3.0 4.0

hi j k

8.0 9.0 10.0 20.0

5.0 A 7.0

ID

Typ. forward transconductance gfs = f (ID)

parameter: tp = 80 µs,

VDS≥2 x ID x RDS(on)max

3.6

S

gfs

2.8

2.4

2.0

1.6

1.2

0.8

0.4

0.0

0.0 0.4 0.8 1.2 1.6 2.0 A 2.6

ID

Semiconductor Group

6

07/96

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