BUZ61A View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

BUZ61A

SIPMOS ® Power Transistor

Infineon Technologies 

BUZ 61 A

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter

Static Characteristics

Drain- source breakdown voltage

VGS = 0 V, ID = 0.25 mA, Tj = 25 °C

Gate threshold voltage

VGS=VDS, ID = 1 mA

Zero gate voltage drain current

VDS = 400 V, VGS = 0 V, Tj = 25 °C

VDS = 400 V, VGS = 0 V, Tj = 125 °C

Gate-source leakage current

VGS = 20 V, VDS = 0 V

Drain-Source on-resistance

VGS = 10 V, ID = 8 A

Symbol

min.

Values

Unit

typ.

max.

V(BR)DSS

400

-

VGS(th)

2.1

3

IDSS

-

0.1

-

10

IGSS

-

10

RDS(on)

-

0.4

V

-

4

µA

1

100

nA

100

Ω

0.5

Semiconductor Group

2

07/96

Share Link: