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BUZ350 View Datasheet(PDF) - Infineon Technologies

Part Name
Description
Manufacturer
BUZ350
Infineon
Infineon Technologies Infineon
BUZ350 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
BUZ 350
Avalanche energy EAS = Æ’(Tj)
parameter: ID = 22 A, VDD = 50 V
RGS = 25 Ω, L = 1.39 mH
500
mJ
EAS 400
350
300
250
200
150
100
50
0
20 40 60 80 100 120 ËšC 160
Tj
Drain-source breakdown voltage
V(BR)DSS = Æ’(Tj)
Typ. gate charge
VGS = Æ’(QGate)
parameter: ID puls = 33 A
16
V
VGS
12
10
0,2 VDS max
0,8 VDS max
8
6
4
2
0
0 10 20 30 40 50 60 70 80 nC 100
QGate
240
V
230
V(BR)DSS
225
220
215
210
205
200
195
190
185
180
-60
-20
20
60
100 ËšC 160
Tj
Data Sheet
8
05.99
 

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