BUZ 344
Drain-source on-resistance
RDS (on) = Æ’(Tj)
parameter: ID = 32 A, VGS = 10 V
0.11
Ω
RDS
0.09
(on)
0.08
0.07
0.06
0.05
98%
0.04
typ
0.03
0.02
0.01
0.00
-60
-20
20
60
100 ËšC 160
Tj
Gate threshold voltage
VGS (th) = Æ’(Tj)
parameter: VGS = VDS, ID = 1 mA
4.6
V
4.0
VGS(th) 3.6
3.2
98%
typ
2.8
2.4
2%
2.0
1.6
1.2
0.8
0.4
0.0
-60
-20
20
60
100 ËšC 160
Tj
Typ. capacitances
C = f (VDS)
parameter:VGS = 0V, f = 1MHz
10 1
Forward characteristics of reverse diode
IF = Æ’(VSD)
parameter: Tj, tp = 80 µs
10 3
nF
C
10 0
Ciss
Coss
Crss
A
IF
10 2
10 -1
10 -2
0
5 10 15 20 25 30 V 40
VDS
Data Sheet
7
10 1
Tj = 25 ËšC typ
Tj = 150 ËšC typ
Tj = 25 ËšC (98%)
Tj = 150 ËšC (98%)
10 0
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VSD
05.99