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BUZ341 View Datasheet(PDF) - Infineon Technologies

Part Name
Description
Manufacturer
BUZ341
Infineon
Infineon Technologies Infineon
BUZ341 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
BUZ 341
Avalanche energy EAS = Æ’(Tj)
parameter: ID = 33 A, VDD = 50 V
RGS = 25 Ω, L = 1.09 mH
800
mJ
EAS
600
500
400
300
200
100
0
20 40 60 80 100 120 ËšC 160
Tj
Drain-source breakdown voltage
V(BR)DSS = Æ’(Tj)
Typ. gate charge
VGS = Æ’(QGate)
parameter: ID puls = 50 A
16
V
VGS
12
10
0,2 VDS max
0,8 VDS max
8
6
4
2
0
0 20 40 60 80 100 120 140 nC 180
QGate
240
V
230
V(BR)DSS
225
220
215
210
205
200
195
190
185
180
-60
-20
20
60
100 ËšC 160
Tj
Data Sheet
8
05.99
 

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