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Part Name
Description
BUZ341 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
BUZ341
SIPMOS® Power Transistor
Infineon Technologies
BUZ341 Datasheet PDF : 8 Pages
1
2
3
4
5
6
7
8
BUZ 341
Power dissipation
P
tot
=
Æ’
(
T
C
)
180
W
P
tot
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 ËšC 160
T
C
Safe operating area
I
D
=
Æ’
(
V
DS
)
parameter:
D
= 0.01
, T
C
= 25ËšC
10
3
A
I
D
10
2
10
1
/
I
D
=
V
DS
R
DS(on)
t
p
= 350.0ns
1 µs
10 µs
100 µs
1 ms
10 ms
10
0
DC
Drain current
I
D
=
Æ’
(
T
C
)
parameter:
V
GS
≥
10 V
34
A
28
I
D
24
20
16
12
8
4
0
0 20 40 60 80 100 120 ËšC 160
T
C
Transient thermal impedance
Z
th JC
=
Æ’
(
t
p
)
parameter:
D = t
p
/
T
10
0
K/W
Z
thJC
10
-1
10
-2
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
-1
10
0
10
1
Data Sheet
10
2
V
V
DS
10
-3
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
0
t
p
5
05.99
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