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BUZ32H View Datasheet(PDF) - Infineon Technologies

Part Name
Description
Manufacturer
BUZ32H
Infineon
Infineon Technologies Infineon
BUZ32H Datasheet PDF : 0 Pages
BUZ 32 H
Avalanche energy EAS = Æ’(Tj)
parameter: ID = 9.5 A, VDD = 50 V
RGS = 25 Ω, L = 2 mH
130
mJ
110
EAS 100
90
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 ËšC 160
Tj
Typ. gate charge
VGS = Æ’(QGate)
parameter: ID puls = 14 A
16
V
VGS
12
10
0,2 VDS max
0,8 VDS max
8
6
4
2
0
0 4 8 12 16 20 24 28 32 nC 38
QGate
Drain-source breakdown voltage
V(BR)DSS = Æ’(Tj)
240
V
230
V(BR)DSS
225
220
215
210
205
200
195
190
185
180
-60
-20
20
60
100 ËšC 160
Tj
Rev. 2.4
Page 8
2009-11-10
 

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