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BUZ32H View Datasheet(PDF) - Infineon Technologies

Part Name
Description
Manufacturer
BUZ32H
Infineon
Infineon Technologies Infineon
BUZ32H Datasheet PDF : 0 Pages
BUZ 32 H
Drain-source on-resistance
RDS (on) = Æ’(Tj)
parameter: ID = 6 A, VGS = 10 V
1.3
Ω
1.1
RDS (on) 1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-60
-20
98%
typ
20
60
100 ËšC 160
Tj
Gate threshold voltage
VGS (th) = Æ’(Tj)
parameter: VGS = VDS, ID = 1 mA
4.6
V
4.0
VGS(th) 3.6
3.2
98%
typ
2.8
2.4
2%
2.0
1.6
1.2
0.8
0.4
0.0
-60
-20
20
60
100 ËšC 160
Tj
Typ. capacitances
C = f (VDS)
parameter:VGS = 0V, f = 1MHz
10 1
Forward characteristics of reverse diode
IF = Æ’(VSD)
parameter: Tj, tp = 80 µs
10 2
nF
C
10 0
A
IF
10 1
Ciss
10 -1
Coss
Crss
10 -2
0
5 10 15 20 25 30 V 40
VDS
10 0
Tj = 25 ËšC typ
Tj = 150 ËšC typ
Tj = 25 ËšC (98%)
Tj = 150 ËšC (98%)
10 -1
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VSD
Rev. 2.4
Page 7
2009-11-10
 

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