BUZ31H View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
BUZ31H Datasheet PDF : 10 Pages
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BUZ 31 H
Avalanche energy EAS = Æ’(Tj)
parameter: ID = 14.5 A, VDD = 50 V
RGS = 25 Ω, L = 1.42 mH
220
mJ
EAS 180
160
140
120
100
80
60
40
20
0
20 40 60 80 100 120 ËšC 160
Tj
Drain-source breakdown voltage
V(BR)DSS = Æ’(Tj)
Typ. gate charge
VGS = Æ’(QGate)
parameter: ID puls = 20 A
16
V
VGS
12
10
0,2 VDS max
0,8 VDS max
8
6
4
2
0
0 10 20 30 40 50 60 70
90
QGate
240
V
230
V(BR)DSS
225
220
215
210
205
200
195
190
185
180
-60
-20
20
60
100 ËšC 160
Tj
Rev. 2.5
Page 8
2009-11-09
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