BUZ31H View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

BUZ31H

SIPMOS® Power Transistor

Infineon Technologies 

BUZ 31 H

Electrical Characteristics, at Tj = 25˚C, unless otherwise specified

Parameter

Symbol

min.

Reverse Diode

Inverse diode continuous forward current

IS

TC = 25 ˚C

-

Inverse diode direct current,pulsed

ISM

TC = 25 ˚C

-

Inverse diode forward voltage

VSD

VGS = 0 V, IF = 29A

-

Reverse recovery time

trr

VR = 100 V, IF=lS, diF/dt = 100 A/µs

-

Reverse recovery charge

Qrr

VR = 100 V, IF=lS, diF/dt = 100 A/µs

-

Values

typ.

max.

-

14.5

-

58

1.1

1.6

170

-

1.1

-

Unit

A

V

ns

µC

Rev. 2.5

Page 4

2009-11-09

Share Link: