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BUZ31 Ver la hoja de datos (PDF) - Infineon Technologies

Número de piezacomponentes DescripciónFabricante
BUZ31 SIPMOS® Power Transistor Infineon
Infineon Technologies Infineon
BUZ31 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
BUZ 31
Electrical Characteristics, at Tj = 25˚C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Inverse diode continuous forward current
IS
TC = 25 ˚C
-
Inverse diode direct current,pulsed
ISM
TC = 25 ˚C
-
Inverse diode forward voltage
VSD
VGS = 0 V, IF = 29 A
-
Reverse recovery time
trr
VR = 100 V, IF=lS, diF/dt = 100 A/µs
-
Reverse recovery charge
Qrr
VR = 100 V, IF=lS, diF/dt = 100 A/µs
-
A
-
14.5
-
58
V
1.1
1.6
ns
170
-
µC
1.1
-
Data Sheet
4
05.99
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