Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

BUZ31 Ver la hoja de datos (PDF) - Infineon Technologies

Número de piezacomponentes DescripciónFabricante
BUZ31 SIPMOS® Power Transistor Infineon
Infineon Technologies Infineon
BUZ31 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
BUZ 31
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 31
VDS
200 V
ID
14.5 A
RDS(on)
0.2
Maximum Ratings
Parameter
Continuous drain current
TC = 30 ˚C
Pulsed drain current
TC = 25 ˚C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 14.5 A, VDD = 50 V, RGS = 25
L = 1.42 mH, Tj = 25 ˚C
Gate source voltage
Power dissipation
TC = 25 ˚C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Data Sheet
1
Ordering Code
C67078-S.1304-A2
Values
Unit
A
14.5
58
14.5
9
mJ
200
± 20
V
W
95
-55 ... + 150 ˚C
-55 ... + 150
1.32
K/W
75
E
55 / 150 / 56
05.99
Direct download click here

 

Share Link : 
All Rights Reserved© datasheetq.com 2015 - 2019  ] [ Privacy Policy ] [ Request Datasheet  ] [ Contact Us ]