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BUZ61A View Datasheet(PDF) - Siemens AG

Part Name
Description
Manufacturer
BUZ61A Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
BUZ 61 A
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 61 A
VDS
400 V
ID
11 A
RDS(on)
0.5 Ω
Maximum Ratings
Parameter
Continuous drain current
TC = 27 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 12.5 A, VDD = 50 V, RGS = 25 Ω
L = 6.38 mH, Tj = 25 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S1341-A3
Values
Unit
A
11
44
12.5
13
mJ
570
± 20
V
W
150
-55 ... + 150 °C
-55 ... + 150
≤ 0.83
K/W
75
E
55 / 150 / 56
Semiconductor Group
1
07/96
 

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