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BUZ42 View Datasheet(PDF) - Siemens AG

Part Name
Description
Manufacturer
BUZ42 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
BUZ 42
Avalanche energy EAS = Æ’(Tj)
parameter: ID = 4 A, VDD = 50 V
RGS = 25 Ω, L = 24.8 mH
240
mJ
200
EAS
180
160
140
120
100
80
60
40
20
0
20 40 60 80 100 120 °C 160
Tj
Drain-source breakdown voltage
V(BR)DSS = Æ’(Tj)
Typ. gate charge
VGS = Æ’(QGate)
parameter: ID puls = 6 A
16
V
VGS
12
10
0,2 VDS max
0,8 VDS max
8
6
4
2
0
0 5 10 15 20 25 30 35 nC 45
QGate
600
V
580
V(BR)DSS570
560
550
540
530
520
510
500
490
480
470
460
450
-60
-20
20
60
100 °C 160
Tj
Semiconductor Group
8
07/96
 

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