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Part Name
Description
BUZ385 View Datasheet(PDF) - Siemens AG
Part Name
Description
Manufacturer
BUZ385
SIPMOS® Power Transistor
Siemens AG
BUZ385 Datasheet PDF : 9 Pages
1
2
3
4
5
6
7
8
9
BUZ 385
Drain-source breakdown voltage
V
(BR)DSS
=
Æ’
(
T
j
)
600
V
580
V
(BR)DSS
570
560
550
540
530
520
510
500
490
480
470
460
450
-60
-20
20
60
100 °C 160
T
j
Typ. gate charge
V
GS
=
Æ’
(
Q
Gate
)
parameter:
I
D puls
= 14 A
16
V
V
GS
12
10
0,2
V
DS max
8
6
4
2
0
0
40
80
120
0,8
V
DS max
160 nC 220
Q
Gate
Semiconductor Group
8
07/96
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