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BUZ380 View Datasheet(PDF) - Siemens AG

Part Name
Description
Manufacturer
BUZ380
Siemens
Siemens AG Siemens
BUZ380 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
BUZ 380
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• FREDFET
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 380
VDS
ID
1000 V 5.5 A
RDS(on)
2Ω
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
RGS = 20 kΩ
Continuous drain current
TC = 30 °C
Pulsed drain current
TC = 25 °C
Gate source voltage
Power dissipation
TC
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-218 AA
Symbol
VDS
VDGR
ID
IDpuls
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-A3205-A2
Values
Unit
1000
V
1000
A
5.5
22
± 20
V
W
≤ 125
-55 ... + 150 °C
-55 ... + 150
≤1
K/W
E
55 / 150 / 56
Semiconductor Group
1
07/96
 

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