BUZ357 View Datasheet(PDF) - Siemens AG
Part Name
Description
Manufacturer
BUZ357 Datasheet PDF : 8 Pages
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BUZ 357
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
VDS = 1000 V, VGS = 0 V, Tj = 25 °C
VDS = 800 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
VGS = 10 V, ID = 3.2 A
Symbol
min.
Values
Unit
typ.
max.
V(BR)DSS
1000 -
VGS(th)
2.1
3
IDSS
-
-
-
10
IGSS
-
10
RDS(on)
-
1.7
V
-
4
µA
1
100
nA
100
Ω
2
Semiconductor Group
2
01/97
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