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Part Name
Description
BUZ355 View Datasheet(PDF) - Siemens AG
Part Name
Description
Manufacturer
BUZ355
SIPMOS® Power Transistor
Siemens AG
BUZ355 Datasheet PDF : 9 Pages
1
2
3
4
5
6
7
8
9
BUZ 355
Power dissipation
P
tot
=
Æ’
(
T
C
)
130
W
110
P
tot
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 °C 160
T
C
Safe operating area
I
D
=
Æ’
(
V
DS
)
parameter:
D
= 0.01
, T
C
= 25°C
10
2
A
I
D
10
1
t
p
= 23.0µs
100 µs
Drain current
I
D
=
Æ’
(
T
C
)
parameter:
V
GS
≥
10 V
6.5
A
5.5
I
D
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0 20 40 60 80 100 120 °C 160
T
C
Transient thermal impedance
Z
th JC
=
Æ’
(
t
p
)
parameter:
D = t
p
/
T
10
1
K/W
Z
thJC
10
0
10
0
1 ms
10 ms
10
-1
10
0
10
1
Semiconductor Group
DC
10
2
V 10
3
V
DS
5
10
-1
10
-2
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
-3
10
-7
single pulse
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
0
t
p
07/96
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