BUZ350 View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

BUZ350

SIPMOS ® Power Transistor

Siemens AG 

BUZ 350

Drain-source on-resistance

RDS (on) = ƒ(Tj)

parameter: ID = 14 A, VGS = 10 V

0.38

Ω

0.32

RDS (on)

0.28

0.24

0.20

98%

0.16

typ

0.12

0.08

0.04

0.00

-60

-20

20

60

100 °C 160

Tj

Gate threshold voltage

VGS (th) = ƒ(Tj)

parameter: VGS = VDS, ID = 1 mA

4.6

V

4.0

VGS(th) 3.6

3.2

98%

typ

2.8

2.4

2%

2.0

1.6

1.2

0.8

0.4

0.0

-60

-20

20

60

100 °C 160

Tj

Typ. capacitances

C = f (VDS)

parameter:VGS = 0V, f = 1MHz

10 2

Forward characteristics of reverse diode

IF = ƒ(VSD)

parameter: Tj, tp = 80 µs

10 2

nF

C

10 1

A

IF

Ciss

10 1

10 0

Coss

Crss

10 -1

0

5 10 15 20 25 30 V 40

VDS

Semiconductor Group

7

10 0

Tj = 25 °C typ

Tj = 150 °C typ

Tj = 25 °C (98%)

Tj = 150 °C (98%)

10 -1

0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0

VSD

07/96

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