BUZ346S2 View Datasheet(PDF) - Siemens AG
Part Name
Description
Manufacturer
BUZ346S2 Datasheet PDF : 9 Pages
| |||
BUZ 346 S2
Not for new design
Typ. output characteristics
ID = Æ’(VDS)
parameter: tp = 80 µs
130
Ptot = 170W
A
kj i h lg
110
ID 100
90
80
70
60
50
40
30
f
VGS [V]
a
4.0
b
4.5
ec
5.0
d
5.5
e
6.0
df
6.5
g
7.0
h
7.5
ci
8.0
j
9.0
k
10.0
l
20.0
b
20
a
10
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0
VDS
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
70
A
60
ID
55
50
45
40
35
30
25
20
15
10
5
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Typ. drain-source on-resistance
RDS (on) = Æ’(ID)
parameter: VGS
0.055
a
b
c
d
e
f
Ω
RDS
0.045
(on)
0.040
0.035
0.030
0.025
0.020
gl
h
0.015
i
kj
0.010
0.005
0.000
VGS [V] =
ab
4.0 4.5
0
20
cd
5.0 5.5
40
ef
6.0 6.5
60
ghi j kl
7.0 7.5 8.0 9.0 10.0 20.0
80 100 A 130
ID
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max
50
S
gfs
40
35
30
25
20
15
10
5
0
0
10 20 30 40 50 A 65
ID
Semiconductor Group
6
07/96
|
|
Share Link: 