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BUZ346S2 View Datasheet(PDF) - Siemens AG

Part Name
Description
Manufacturer
BUZ346S2
Siemens
Siemens AG Siemens
BUZ346S2 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
SIPMOS ® Power Transistor
BUZ 346 S2
Not for new design
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
VDS
BUZ 346 S2 60 V
ID
58 A
RDS(on)
0.018 Ω
Maximum Ratings
Parameter
Continuous drain current
TC = 73 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 58 A, VDD = 25 V, RGS = 25 Ω
L = 21.4 µH, Tj = 25 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-218 AA
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S3120-A4
Values
Unit
A
58
232
58
4.5
mJ
72
± 20
V
W
170
-55 ... + 150 °C
-55 ... + 150
≤ 0.74
K/W
≤ 75
C
55 / 150 / 56
Semiconductor Group
1
07/96
 

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