BUZ330 View Datasheet(PDF) - Siemens AG
Part Name
Description
Manufacturer
BUZ330 Datasheet PDF : 9 Pages
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BUZ 330
Avalanche energy EAS = Æ’(Tj)
parameter: ID = 9.5 A, VDD = 50 V
RGS = 25 Ω, L = 13.4 mH
700
mJ
600
EAS 550
500
450
400
350
300
250
200
150
100
50
0
20 40 60 80 100 120 °C 160
Tj
Drain-source breakdown voltage
V(BR)DSS = Æ’(Tj)
Typ. gate charge
VGS = Æ’(QGate)
parameter: ID puls = 14 A
16
V
VGS
12
10
0,2
V
DS
max
8
0,8
V
DS
max
6
4
2
0
0
40
80 120 160 nC 240
QGate
600
V
580
V(BR)DSS570
560
550
540
530
520
510
500
490
480
470
460
450
-60
-20
20
60
100 °C 160
Tj
Semiconductor Group
8
07/96
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