BUZ326 View Datasheet(PDF) - Siemens AG
Part Name
Description
Manufacturer
BUZ326 Datasheet PDF : 9 Pages
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BUZ 326
Avalanche energy EAS = Æ’(Tj)
parameter: ID = 10.5 A, VDD = 50 V
RGS = 25 Ω, L = 9.05 mH
600
mJ
500
EAS
450
400
350
300
250
200
150
100
50
0
20 40 60 80 100 120 °C 160
Tj
Drain-source breakdown voltage
V(BR)DSS = Æ’(Tj)
Typ. gate charge
VGS = Æ’(QGate)
parameter: ID puls = 15 A
16
V
VGS
12
10
0,2 VDS max
8
6
4
2
0
0
20
40
60
0,8 VDS max
80 nC 110
QGate
480
V
460
V(BR)DSS
450
440
430
420
410
400
390
380
370
360
-60
-20
20
60
100 °C 160
Tj
Semiconductor Group
8
07/96
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