BUZ311 View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

BUZ311

SIPMOS® Power Transistor

Siemens AG 

BUZ 311

Drain-source breakdown voltage

V(BR)DSS = ƒ(Tj)

1200

V

1160

V(BR)DS1S140

1120

1100

1080

1060

1040

1020

1000

980

960

940

920

900

-60

-20

20

60

100 °C 160

Tj

Typ. gate charge

VGS = ƒ(QGate)

parameter: ID puls = 4 A

16

V

VGS

12

10

8

0,2 VDS max

0,8 VDS max

6

4

2

0

0

10 20 30 40 50 nC 65

QGate

Semiconductor Group

8

07/96

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