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Part Name
Description
BUZ308 View Datasheet(PDF) - Siemens AG
Part Name
Description
Manufacturer
BUZ308
SIPMOS Power Transistor
Siemens AG
BUZ308 Datasheet PDF : 9 Pages
1
2
3
4
5
6
7
8
9
BUZ 308
Avalanche energy
E
AS
=
ƒ
(
T
j
)
parameter:
I
D
= 3 A,
V
DD
= 50 V
R
GS
= 25
Ω
,
L
= 66.6 mH
340
mJ
280
E
AS
240
200
160
120
80
40
0
20 40 60 80 100 120 °C 160
T
j
Drain-source breakdown voltage
V
(BR)DSS
=
ƒ
(
T
j
)
Typ. gate charge
V
GS
=
ƒ
(
Q
Gate
)
parameter:
I
D puls
= 5 A
16
V
V
GS
12
10
0,2
V
DS max
8
0,8
V
DS max
6
4
2
0
0 10 20 30 40 50 nC 70
Q
Gate
960
V
920
V
(BR)DSS
900
880
860
840
820
800
780
760
740
720
-60
-20
20
60
100 °C 160
T
j
Semiconductor Group
8
09/96
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