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BUZ308 View Datasheet(PDF) - Siemens AG

Part Name
Description
Manufacturer
BUZ308
Siemens
Siemens AG Siemens
BUZ308 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
BUZ 308
Avalanche energy EAS = ƒ(Tj)
parameter: ID = 3 A, VDD = 50 V
RGS = 25 , L = 66.6 mH
340
mJ
280
EAS
240
200
160
120
80
40
0
20 40 60 80 100 120 °C 160
Tj
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
Typ. gate charge
VGS = ƒ(QGate)
parameter: ID puls = 5 A
16
V
VGS
12
10
0,2 VDS max
8
0,8 VDS max
6
4
2
0
0 10 20 30 40 50 nC 70
QGate
960
V
920
V(BR)DSS
900
880
860
840
820
800
780
760
740
720
-60
-20
20
60
100 °C 160
Tj
Semiconductor Group
8
09/96
 

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