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BUZ21L View Datasheet(PDF) - Siemens AG

Part Name
Description
Manufacturer
BUZ21L Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
BUZ 21 L
Typ. output characteristics
ID = Æ’(VDS)
parameter: tp = 80 µs , Tj = 25 °C
50
Ptot = 75W
A
ID
40
35
30
25
20
15
lk j i
gh
f
VGS [V]
a 3.0
b 3.5
e c 4.0
d 4.5
e 5.0
f 5.5
d g 6.0
h 6.5
i 7.0
c j 8.0
k 9.0
l 10.0
10
b
5
a
0
0.0 1.0 2.0 3.0 4.0 5.0
V 7.0
VDS
Typ. drain-source on-resistance
RDS (on) = Æ’(ID)
parameter: tp = 80 µs, Tj = 25 °C
0.26
a
Ω
b
c
d
0.22
RDS (on)0.20
0.18
0.16
0.14
0.12
0.10
e
0.08
g
f
0.06
0.04 VGS [V] =
0.02
abcdef
3.05 4.0 4.5 5.0 5.5 6.0
ghi j
6.5 7.0 8.0 9.0
h
i
k
j
k
10.0
0.00
0 4 8 12 16 20 24 28 32 A 40
ID
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
60
A
50
ID
45
40
35
30
25
20
15
10
5
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max
20
S
gfs
16
14
12
10
8
6
4
2
0
0
10
20
30
40
A
60
ID
Semiconductor Group
6
01/97
 

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