BUZ12A View Datasheet(PDF) - Siemens AG
Part Name
Description
Manufacturer
BUZ12A Datasheet PDF : 9 Pages
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BUZ 12 A
Not for new design
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
100
Ptot = 125W
A
l
kj
i
ID
80
70
60
50
40
30
20
VGS [V]
h a 4.0
b 4.5
g c 5.0
d 5.5
e 6.0
f f 6.5
g 7.0
h 7.5
e
i 8.0
j 9.0
d k 10.0
l 20.0
c
10
b
0
a
0.0 1.0 2.0 3.0 4.0 5.0
V 7.0
VDS
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
60
A
50
ID
45
40
35
30
25
20
15
10
5
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: VGS
0.11
Ωa
b
c
d
e
f
g
0.09
RDS (on)
0.08
0.07
0.06
0.05
h
0.04
i
j
0.03
k
0.02
VGS [V] =
0.01 a b c d e f
4.05 5.0 5.5 6.0 6.5 7.0
0.00
ghi j k
7.5 8.0 9.0 10.0 20.0
0 10 20 30 40 50 60 70 A 90
ID
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max
30
S
gfs
24
22
20
18
16
14
12
10
8
6
4
2
0
0
10 20 30 40 50 A 65
ID
Semiconductor Group
6
07/96
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