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BUZ11AL View Datasheet(PDF) - Siemens AG

Part Name
Description
Manufacturer
BUZ11AL
Siemens
Siemens AG Siemens
BUZ11AL Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
BUZ 11 AL
Not for new design
Avalanche energy EAS = Æ’(Tj)
parameter: ID = 30 A, VDD = 25 V
RGS = 25 Ω, L = 15.6 µH
15
mJ
EAS 12
11
10
9
8
7
6
5
4
3
2
1
0
20 40 60 80 100 120 °C 160
Tj
Drain-source breakdown voltage
V(BR)DSS = Æ’(Tj)
Typ. gate charge
VGS = Æ’(QGate)
parameter: ID puls = 39 A
16
V
VGS
12
10
8
0,2 VDS max
6
0,8 VDS max
4
2
0
0 10 20 30 40 50 60 70 nC 90
QGate
60
V
V(BR)DSS 57
56
55
54
53
52
51
50
49
48
47
46
45
-60
-20
20
60
100 °C 160
Tj
Semiconductor Group
8
07/96
 

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