BUZ 111SL
Electrical Characteristics, at Tj = 25 ËšC, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Dynamic Characteristics
Gate to source charge
VDD = 40 V, ID = 80 A
Gate to drain charge
VDD = 40 V, ID = 80 A
Gate charge total
VDD = 40 V, ID = 80 A, VGS = 0 to 10 V
Gate plateau voltage
VDD = 40 V, ID = 80 A
Qgs
-
Qgd
-
Qg
-
V(plateau)
-
12 18 nC
61 91.5
155 232
3.4
-V
Reverse Diode
Inverse diode continuous forward current
IS
TC = 25 ËšC
-
-
80 A
Inverse diode direct current,pulsed
TC = 25 ËšC
ISM
-
-
320
Inverse diode forward voltage
VGS = 0 V, IF = 160 A
Reverse recovery time
VR = 30 V, IF=IS , diF/dt = 100 A/µs
VSD
- 1.25 1.8 V
trr
-
105 157 ns
Reverse recovery charge
VR = 30 V, IF=lS , diF/dt = 100 A/µs
Qrr
- 0.31 0.47 µC
Data Sheet
4
05.99