BUZ111S View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

BUZ111S

SIPMOS ® Power Transistor

Siemens AG 

BUZ111S

SPP80N05

Drain-source on-resistance

RDS (on) = ƒ(Tj)

parameter: ID = 80 A, VGS = 10 V

0.026

Ω

0.022

RDS (on0).020

0.018

0.016

0.014

0.012

0.010

0.008

98%

typ

0.006

0.004

0.002

0.000

-60

-20

20

60 100 °C 180

Tj

Typ. capacitances

C = f (VDS)

parameter:VGS = 0V, f = 1MHz

10 1

Gate threshold voltage

VGS(th)= f (Tj)

parameter:VGS=VDS, ID =240µA

5.0

V

4.4

VGS(th) 4.0

3.6

3.2

2.8

2.4

max

2.0

1.6

typ

1.2

0.8

0.4

min

0.0

-60 -20 20 60 100 140 V 200

Tj

Forward characteristics of reverse diode

IF = ƒ(VSD)

parameter: Tj, tp = 80 µs

10 3

nF

C

10 0

Ciss

Coss

Crss

A

I

F

10 2

10 -1

10 -2

0

5 10 15 20 25 30 V 40

VDS

Semiconductor Group

7

10 1

Tj = 25 °C typ

Tj = 175 °C typ

Tj = 25 °C (98%)

Tj = 175 °C (98%)

10 0

0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0

VSD

28/Jan/1998

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