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Part Name
Description
BUZ111S View Datasheet(PDF) - Siemens AG
Part Name
Description
Manufacturer
BUZ111S
SIPMOS ® Power Transistor
Siemens AG
BUZ111S Datasheet PDF : 8 Pages
1
2
3
4
5
6
7
8
BUZ111S
SPP80N05
Power dissipation
P
tot
=
Æ’
(
T
C
)
260
W
220
P
tot
200
180
160
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 °C 180
T
C
Safe operating area
I
D
=
Æ’
(
V
DS
)
parameter:
D
= 0
, T
C
= 25°C
10
3
A
I
D
10
2
t
p
= 29.0µs
100 µs
Drain current
I
D
=
Æ’
(
T
C
)
parameter:
V
GS
≥
10 V
90
A
I
D
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 °C 180
T
C
Transient thermal impedance
Z
th JC
=
Æ’
(
t
p
)
parameter:
D = t
p
/
T
10
0
K/W
10
-1
Z
thJC
10
-2
D = 0.50
1 ms
10
-3
0.20
10
1
0.10
10 ms
0.05
DC
10
-4
single pulse
0.02
0.01
10
0
10
0
10
1
V 10
2
V
DS
10
-5
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
0
t
p
Semiconductor Group
5
28/Jan/1998
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