BUZ 110 SL
SPP80N05L
Typ. output characteristics
ID = Æ’(VDS)
parameter: tp = 80 µs , Tj = 25 °C
180 Ptot = 200W
l kj i h g
A
ID 140
120
100
80
60
40
VGS [V]
fa
2.5
b
3.0
c
3.5
d
4.0
e
e
4.5
f
5.0
g
5.5
dh
6.0
i
6.5
j
7.0
k
8.0
cl
10.0
20
b
0
a
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0
VDS
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
70
Typ. drain-source on-resistance
RDS (on) = Æ’(ID)
parameter: tp = 80 µs, Tj = 25 °C
0.050
Ωa
b
c
d
e
RDS
0.040
(on)
0.035
0.030
0.025
0.020
0.015
0.010
VGS [V] =
0.005 a b c d e f
23.50 3.5 4.0 4.5 5.0 5.5
0.000
f
h
j
g
i
k
ghi j k
6.0 6.5 7.0 8.0 10.0
0 20 40 60 80 100 120 A 160
ID
A
I
D
50
40
30
20
10
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Semiconductor Group
6
28/Jan/1998