BUZ 110 S
SPP80N05
Avalanche energy EAS = f (Tj)
parameter:ID=80 A,VDD =25 V
RGS =3.8 Ω , L = 144 µH
500
mJ
EAS 400
350
300
250
200
150
100
50
0
20 40 60 80 100 120 140 °C 180
Tj
Drain-source breakdown voltage
V(BR)DSS = Æ’(Tj)
Typ. gate charge
VGS = Æ’(QGate)
parameter: ID puls = 80 A
16
V
VGS
12
10
0,2 VDS max
0,8 VDS max
8
6
4
2
0
0
20 40 60 80 100 nC 130
QGate
65
V
V
(BR)DSS
61
59
57
55
53
51
49
-60
-20
20
60 100 °C 180
Tj
Semiconductor Group
8
28/Jan/1998