BUZ110S Просмотр технического описания (PDF) - Siemens AG
| Номер в каталоге | Компоненты Описание | производитель |
| BUZ110S | SIPMOS® Power Transistor |  Siemens AG  |
BUZ110S Datasheet PDF : 8 Pages
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BUZ 110 S
SPP80N05
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
180 Ptot = 200Wl
kj
i
A
ID 140
120
100
80
60
40
hVGS [V]
a
4.0
b
4.5
gc
5.0
d
5.5
e
6.0
ff
6.5
g
7.0
h
7.5
e
i
8.0
j
9.0
dk
10.0
l
20.0
c
20
b
0
a
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0
VDS
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
70
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: tp = 80 µs, Tj = 25 °C
0.038
Ω
0.032
RDS (on)
0.028
a
b
c
d
e
f
0.024
0.020
0.016
g
0.012
h
i
0.008
j
0.004
VGS [V] =
ab
c
45.05 5.5 6.0
0.000
0 20 40
def
6.5 7.0 7.5
60 80
ghi j
8.0 9.0 10.0 20.0
100 120 140 A 170
ID
A
I
D
50
40
30
20
10
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Semiconductor Group
6
28/Jan/1998
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